the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1999 mos field effect transistor 2sK3306 switching n-channel power mos fet industrial use data sheet document no. d14004ej2v0ds00 (2nd edition) date published january 2000 ns cp(k) printed in japan the mark h h h h shows major revised points. description the 2sK3306 is n-channel dmos fet device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, ac adapter. features low gate charge : q g = 13 nc typ. (v dd = 400 v, v gs = 10 v, i d = 5.0 a) gate voltage rating : 30 v low on-state resistance : r ds(on) = 1.5 w max. (v gs = 10 v, i d = 2.5 a) avalanche capability ratings isolated to-220(mp-45f) package absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 500 v gate to source voltage (v ds = 0 v) v gss(ac) 30 v drain current (dc) i d(dc) 5a drain current (pulse) note1 i d(pulse) 20 a total power dissipation (t c = 25c) p t 35 w total power dissipation (t a = 25c) p t 2.0 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c single avalanche current note2 i as 5.0 a single avalanche energy note2 e as 125 mj notes 1. pw 10 m s, duty cycle 1 % 2. starting t ch = 25 c, v dd = 150 v, r g = 25 w , v gs = 20 v ? 0 v ordering information part number package 2sK3306 isolated to-220 (mp-45f) (isolated to-220) h h h h
data sheet d14004ej2v0ds00 2 2sK3306 electrical characteristics (t a = 25 c) characteristics symbol min. typ. max. unit test conditions drain leakage current i dss 100 m av ds = 500 v, v gs = 0 v gate to source leakage current i gss 100 na v gs = 30 v, v ds = 0 v gate to source cut-off voltage v gs(off) 2.5 3.5 v v ds = 10 v, i d = 1 ma forward transfer admittance | y fs | 1.0 3.0 s v ds = 10 v, i d = 2.5 a drain to source on-state resistance r ds(on) 1.35 1.5 w v gs = 10 v, i d = 2.5 a input capacitance c iss 700 pf v ds = 10 v, v gs = 0 v, f = 1 mhz output capacitance c oss 115 pf reverse transfer capacitance c rss 6pf turn-on delay time t d(on) 16 ns v dd = 150 v, i d = 2.5 a, v gs(on) = 10 v, rise time t r 3nsr g = 10 w, r l = 60 w turn-off delay time t d(off) 33 ns fall time t f 5.5 ns total gate charge q g 13 nc v dd = 400 v, v gs(on) = 10 v, i d = 5.0 a gate to source charge q gs 4nc gate to drain charge q gd 4.5 nc body diode forward voltage v f(s-d) 1.0 v i f = 5.0 a, v gs = 0 v reverse recovery time t rr 0.7 m si f = 5.0 a, v gs = 0 v, di/dt = 50 a / m s reverse recovery charge q rr 3.3 m c test circuit 1 avalanche capability r g = 25 w 50 w pg l v dd v gs = 20 ? 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs (on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h
data sheet d14004ej2v0ds00 3 2sK3306 typical characteristics(t a = 25 c) derating factor of forward bias safe operating area 40 60 100 120 140 160 20 40 60 80 100 t c - case temperature - ?c dt - percentage of rated power - % 020 total power dissipation vs. case temperature 20 40 60 80 100 120 140 160 t c - case temperature - ?c p t - total power dissipation - w 0 drain current vs. drain to source voltage 0 4 8 12 16 v ds - drain to source voltage - v i d - drain current - a 10 8 6 2 forward bias safe operating area 100 10 0.1 10 100 1000 v ds - drain to source voltage - v i d - drain current - a 1 1 power dissipation limited 10 ms r ds (on) limited (at v gs = 10 v) i d (dc) i d (pulse) 100 m s t c = 25 ?c single pulse pw = 10 m s pulsed drain current vs. gate to source voltage 0 v gs - gate to source voltage - v pulsed 1000 100 0.001 0.01 i d - drain current - a 50 40 30 20 10 v gs = 20 v 0.1 1 10 51015 80 100 ms 1ms 4 10 v 8.0 v v gs = 6.0 v t a = C25 ?c 25 ?c 75 ?c 125 ?c
data sheet d14004ej2v0ds00 4 2sK3306 transient thermal resistance vs. pulse width 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 pw - pulse width - s r th(ch-c) (t) - transient thermal resistance - ?c/w r ds(on) - drain to source on-state resistance - w 3.0 2.0 0 drain to source on-state resistance vs. drain current 0.1 10 i d - drain current - a 1 v gs(off) - gate to source cut-off voltage - v 1.0 0.0 C50 0 50 100 150 200 t ch - channel temperature - ?c gate to source cut-off voltage vs. channel temperature pulsed t c = 25 ?c single pulse forward transfer admittance vs. drain current 10 1 0.1 110 iyfsi - forward transfer admittance - s i d - drain current - a 0.01 0.01 drain to source on-state resistance vs. gate to source voltage 10 15 20 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - w pulsed 25 05 0.0 i d = 2.5 a 3.0 4.0 2.0 1.0 100 0.1 2.0 3.0 4.0 v ds = 10 v i d = 1 ma 1.0 t a = C25 ?c 25 ?c 75 ?c 125 ?c v ds = 10 v pulsed 0.01 r th(ch-c) = 3.57 ?c/w r th(ch-a) = 62.5 ?c/w i d = 5.0 a
data sheet d14004ej2v0ds00 5 2sK3306 drain to source on-state resistance vs. channel temperature 3.0 2.0 1.0 0.0 C50 0 50 100 150 v gs = 10 v t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - w source to drain diode forward voltage 10 1 0.5 0.1 1.5 v sd - source to drain voltage - v i sd - diode forward current - a switching characteristics 100 10 1 t d(on) , t r , t d(off) , t f - switching time - ns 0.1 100 i d - drain current - a reverse recovery time vs. drain current 0 0.1 10 100 t rr - reverse recovery time - ns i d - drain current - a 4 2810 61214 400 500 600 700 800 300 200 100 v ds v gs i d = 5.0 a v ds - drain to source voltage - v q g - gate charge - nc v gs - gate to source voltage - v dynamic input/output characteristics 14 12 10 8 6 4 2 pulsed di/dt = 100 a/ m s v gs = 0 v v dd = 150 v v gs = 10 v r g = 10 w capacitance vs. drain to source voltage 1 000 10 100 1 100 1000 v ds - drain to source voltage - v v gs = 0 v f = 1.0 mhz t f t d(off) t d(on) i d = 2.5 a 1.0 0.0 0.01 100 10 10000 c iss 1 200 1000 1200 1400 1600 1800 2000 800 600 110 0.1 i d = 5.0 a v gs = 0 v v gs = 10 v 0.1 1 400 c oss t r v dd = 400 v 250 v 125 v c iss , c oss , c rss - capacitance - pf c rss
data sheet d14004ej2v0ds00 6 2sK3306 single avalanche current vs inductive load 100 10 1 1.00eC04 1.00eC03 1.00eC02 1.00eC01 i as - single avalanche current - a single avalanche energy vs starting channel temperature 150 100 125 75 25 e as - single avalanche energy - mj 50 25 50 75 100 125 i d(peak) = i as r g = 25 w v gs = 20 v ? 0 v v dd = 150 v i as = 5.0 a e as = 125 mj 150 175 e as = 125 mj r g = 25 w v dd = 150 v v gs = 20 v ? 0 v starting t ch = 25 ?c l - inductive load - h starting t ch - starting channel temperature - ?c 0 0.1
data sheet d14004ej2v0ds00 7 2sK3306 package drawing (unit: mm) isolated to-220(mp-45f) 1. gate 2. drain 3. source 10.00.3 3.20.2 2.70.2 1.30.2 0.70.1 2.54 2.54 1.50.2 123 40.2 13.5 min. 12.00.2 15.00.3 30.1 4.50.2 2.50.1 0.650.1 remark strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. equivalent circuit source body diode gate drain h h h h
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